| PART |
Description |
Maker |
| NX5311 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
|
California Eastern Laboratories
|
| NX5313 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
California Eastern Laboratories
|
| NX5321EH NX5321EK NX5321 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
NEC
|
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| NX5521 NX5521EH |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5501 NX5501EH-AZ NX5501EK-AZ |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
California Eastern Laboratories
|
| DS1865T_TR DS1865 DS1865T_ |
PON Triplexer Control and Monitoring Circuit
|
MAXIM[Maxim Integrated Products]
|
| G8931-04-15 |
Time response characteristics compatible with SONET and G/GE-PON
|
Hamamatsu Corporation
|
| BT-1112XX |
10G XG-PON ONU Bi-direction OSA Module
|
AVAGO TECHNOLOGIES LIMI...
|
| DS1884AT DS1884TT DS1884ATT |
SFP and PON ONU Controller with Digital LDD Interface
|
MAXIM - Dallas Semiconductor
|
| FTM-9412P-F10 FTM-9412P-F10DC FTM-9412P-F10E FTM-9 |
(FTM-9412P-x10xx) SFF GE-PON Px10 ONU Transceiver
|
Fiberxon
|
